Items where authors include "David, J.P.R."

Number of items: 70.

Article

Jin, X. orcid.org/0000-0002-7205-3318, Zhao, S. orcid.org/0009-0004-2105-6019, Craig, A.P. et al. (8 more authors) (2024) High-performance room temperature 2.75 µm cutoff In0.22Ga0.78As0.19Sb0.81/Al0.9Ga0.1As0.08Sb0.92 avalanche photodiode. Optica, 11 (12). pp. 1632-1638. ISSN 2334-2536

Liu, Y. orcid.org/0000-0003-3034-9628, Jin, X. orcid.org/0000-0002-7205-3318, Jung, H. orcid.org/0000-0002-5250-4767 et al. (5 more authors) (2024) Electroabsorption in InGaAs and GaAsSb p-i-n photodiodes. Applied Physics Letters, 125 (22). 221107. ISSN 0003-6951

Tao, X. orcid.org/0009-0007-0794-7319, Jin, X., Gao, S. et al. (9 more authors) (2024) Engineering of impact ionization characteristics in GaAs/GaAsBi multiple quantum well avalanche photodiodes. ACS Photonics, 11 (11). pp. 4846-4853. ISSN 2330-4022

Jung, H. orcid.org/0000-0002-5250-4767, Lee, S. orcid.org/0000-0002-5669-1555, Jin, X. orcid.org/0000-0002-7205-3318 et al. (5 more authors) (2024) Low excess noise and high quantum efficiency avalanche photodiodes for beyond 2 µm wavelength detection. Communications Materials, 5 (1). 219. ISSN 2662-4443

Jin, X. orcid.org/0000-0002-7205-3318, Lewis, H.I.J. orcid.org/0000-0003-4698-4300, Yi, X. orcid.org/0000-0003-0177-2398 et al. (5 more authors) (2024) Impact ionization coefficients and excess noise in Al0.55Ga0.45As0.56Sb0.44 lattice matched to InP. Applied Physics Letters, 124 (25). 251104. ISSN 0003-6951

Fleming, F. orcid.org/0000-0001-9342-6446, Yi, X. orcid.org/0000-0003-0177-2398, Mirza, M.M.A. et al. (13 more authors) (2024) Surface-normal illuminated pseudo-planar Ge-on-Si avalanche photodiodes with high gain and low noise. Optics Express, 32 (11). 19449. ISSN 1094-4087

Jin, X. orcid.org/0000-0002-7205-3318, Lewis, H.I.J., Yi, X. orcid.org/0000-0003-0177-2398 et al. (6 more authors) (2023) Very low excess noise Al0.75Ga0.25As0.56Sb0.44 avalanche photodiode. Optics Express, 31 (20). pp. 33141-33149. ISSN 1094-4087

Singh, R. orcid.org/0000-0002-2646-4204, O'Farrell, T. orcid.org/0000-0002-7870-4097, Biagi, M. orcid.org/0000-0003-4830-2641 et al. (2 more authors) (2023) Vector coding optical wireless links. Journal of Lightwave Technology, 41 (17). pp. 5577-5587. ISSN 0733-8724

Campbell, J.C., David, J.P.R. orcid.org/0000-0002-1105-208X and Bank, S.R. (2023) Sb-based low-noise avalanche photodiodes. Photonics, 10 (7). 715. ISSN 2304-6732

Lewis, H.I.J., Jin, X., Guo, B. et al. (8 more authors) (2023) Anomalous excess noise behavior in thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Scientific Reports, 13. 9936. ISSN 2045-2322

Jung, H. orcid.org/0000-0002-5250-4767, Lee, S. orcid.org/0000-0002-5669-1555, Liu, Y. orcid.org/0000-0003-3034-9628 et al. (3 more authors) (2023) High electric field characteristics of GaAsSb photodiodes on InP substrates. Applied Physics Letters, 122 (22). 221102. ISSN 0003-6951

Lee, S. orcid.org/0000-0002-5669-1555, Jin, X. orcid.org/0000-0002-7205-3318, Jung, H. et al. (10 more authors) (2023) High gain, low noise 1550 nm GaAsSb/AlGaAsSb avalanche photodiodes. Optica, 10 (2). 147. ISSN 2334-2536

Bui, T.-C. orcid.org/0000-0003-2410-5379, Singh, R. orcid.org/0000-0002-2646-4204, O'Farrell, T. orcid.org/0000-0002-7870-4097 et al. (3 more authors) (2022) Optimized multi-primary modulation for visible light communication. Journal of Lightwave Technology, 40 (22). pp. 7254-7264. ISSN 0733-8724

Rockett, T.B.O., Adham, N.A., Harun, F. et al. (2 more authors) (2022) Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods. Journal of Crystal Growth, 589. 126679. ISSN 0022-0248

Bailey, N.J., Carr, M.R., David, J.P.R. et al. (1 more author) (2022) Growth of InAs(Bi)/GaAs quantum dots under a bismuth surfactant at high and low temperature. Journal of Nanomaterials, 2022. 5108923. ISSN 1687-4110

Bailey, N.J. orcid.org/0000-0001-8131-8544, Rockett, T.B.O., Flores, S. et al. (3 more authors) (2022) Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling. Scientific Reports, 12. 797. ISSN 2045-2322

Liu, Y., Yi, X., Bailey, N.J. et al. (6 more authors) (2021) Valence band engineering of GaAsBi for low noise avalanche photodiodes. Nature Communications, 12 (1). 4784.

Richards, R.D. orcid.org/0000-0001-7043-8372, Harun, F., Nawawi, M.R.M. et al. (3 more authors) (2021) Temperature and band gap dependence of GaAsBi p-i-n diode current–voltage behaviour. Journal of Physics D: Applied Physics, 54 (19). 195102. ISSN 0022-3727

Gamel, M.M.A., Ker, P.J., Lee, H.J. et al. (4 more authors) (2021) Multi-dimensional optimization of In0.53Ga0.47As thermophotovoltaic cell using real coded genetic algorithm. Scientific Reports, 11 (1). 7741.

Lim, L.W. orcid.org/0000-0002-8039-5406, Patil, P., Marko, I. et al. (5 more authors) (2020) Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications. Semiconductor Science and Technology, 35 (9). 095031. ISSN 0268-1242

Yi, X., Xie, S., Liang, B. et al. (6 more authors) (2019) Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nature Photonics, 13 (10). pp. 683-686. ISSN 1749-4885

Flores, S., Reyes, D.F., Braza, V. et al. (6 more authors) (2019) Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies. Applied Surface Science, 485. pp. 29-34. ISSN 0169-4332

Richards, R.D. orcid.org/0000-0001-7043-8372, Rockett, T.B.O., Nawawi, M.R.M. et al. (6 more authors) (2018) Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature. Semiconductor Science and Technology, 33 (9). 094008. ISSN 0268-1242

Yi, X., Xie, S., Liang, B. et al. (6 more authors) (2018) Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports, 8 (1). 9107. ISSN 2045-2322

Qiao, L., Dimler, S.J., Baharuddin, A.N.A.P. et al. (2 more authors) (2018) An excess noise measurement system for weak responsivity avalanche photodiodes. Measurement Science and Technology, 29 (6). 065015. ISSN 0957-0233

Wilson, T., Hylton, N.P., Harada, Y. orcid.org/0000-0003-4784-6751 et al. (6 more authors) (2018) Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi. Scientific Reports, 8 (1). 6457. ISSN 2045-2322

Richards, R.D. orcid.org/0000-0001-7043-8372, Mellor, A., Harun, F. et al. (7 more authors) (2017) Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices. Solar Energy Materials and Solar Cells, 172. pp. 238-243. ISSN 0927-0248

Cheong, J.S., Baharuddin, A.N.A.P., Ng, J.S. et al. (2 more authors) (2017) Absorption coefficients in AlGaInP lattice-matched to GaAs. Solar Energy Materials and Solar Cells, 164. pp. 28-31. ISSN 0927-0248

Jamil, E., Cheong, J.S., David, J.P.R. et al. (1 more author) (2016) On the analytical formulation of excess noise in avalanche photodiodes with dead space. Optics Express, 24 (19). pp. 21597-21608. ISSN 1094-4087

Balanta, M.A.G., Kopaczek, J., Orsi Gordo, V. et al. (8 more authors) (2016) Optical and spin properties of localized and free excitons in GaBi ₓAs₁-ₓ /GaAs multiple quantum wells. Journal of Physics D: Applied Physics, 49 (35). ISSN 0022-3727

Auckloo, A., Cheong, J.S., Meng, X. et al. (5 more authors) (2016) Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 11 (3). P03021. ISSN 1748-0221

Qiao, L., Cheong, J.S., Ong, J.S.L. et al. (4 more authors) (2015) Avalanche Noise in Al0.52In0.48P Diodes. IEEE Photonics Technology Letters, 28 (4). pp. 481-484. ISSN 1041-1135

Cheong, J.S., Ng, J.S., Krysa, A.B. et al. (2 more authors) (2015) Determination of absorption coefficients in AlInP lattice matched to GaAs. Journal of Physics D: Applied Physics, 48 (40). 5101. ISSN 0022-3727

Richards, R.D. orcid.org/0000-0001-7043-8372, Bastiman, F., Roberts, J.S. et al. (3 more authors) (2015) MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization. Journal of Crystal Growth, 425. pp. 237-240. ISSN 0022-0248

White, B.S., Sandall, I.C., David, J.P.R. et al. (1 more author) (2015) InAs Diodes Fabricated Using Be Ion Implantation. IEEE Transactions on Electron Devices, 62 (9). 2928 - 2932. ISSN 0018-9383

Meng, X., Tan, C.H., Dimler, S. et al. (2 more authors) (2014) 1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature. Optics Express, 22 (19). 22608 - 22615.

Gomes, R.B., Tan, C.H., Meng, X. et al. (2 more authors) (2014) GaAs/Al 0.8 Ga 0.2 As avalanche photodiodes for soft X-ray spectroscopy. Journal of Instrumentation, 9. P03014.

Zhou, X., Hobbs, M.J., White, B.S. et al. (3 more authors) (2014) An InGaAlAs-InGaAs two-color photodetector for ratio thermometry. IEEE Transactions on Electronic Devices, 61 (3). 838 - 843. ISSN 0018-9383

Ong, J.S.L., Ng, J.S., Krysa, A.B. et al. (1 more author) (2014) Temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P. Journal of Applied Physics, 115. 064507. ISSN 0021-8979

El-Howayek, G., Zhang, C., Li, Y. et al. (3 more authors) (2014) On the Use of Gaussian Approximation in Analyzing the Performance of Optical Receivers. IEEE Photonics Journal, 6. 6800508. ISSN 1943-0655

Tan, S.L., Soong, W.M., Green, J.E. et al. (9 more authors) (2013) Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes. Applied Physics Letters, 103. 102101. ISSN 0003-6951

Gomes, R.B., Tan, C.H., Lees, J.E. et al. (2 more authors) (2012) Effects of Dead Space on Avalanche Gain Distribution of X-Ray Avalanche Photodiodes. IEEE Transactions on Electron Devices, 59 (4). 1063 - 1067. ISSN 0018-9383

Vines, P., Tan, C.H., David, J.P.R. et al. (5 more authors) (2011) Versatile spectral imaging with an algorithm-based spectrometer using highly tuneable quantum dot infrared photodetectors. IEEE Journal of Quantum Electronics, 47 (2). pp. 190-197. ISSN 0018-9197

Marshall, A.R.J., David, J.P.R. and Tan, C.H. (2010) Impact ionization in InAs electron avalanche photodiodes. IEEE Transactions on Electron Devices, 57 (10). pp. 2631-2638. ISSN 0018-9383

Mun, S.C.L.T., Tan, C.H., Dimler, S.J. et al. (4 more authors) (2009) A theoretical comparison of the breakdown behavior of In0.52Al0.48As and InP near-infrared single-photon avalanche photodiodes. IEEE Journal of Quantum Electronics, 45 (5-6). pp. 566-571. ISSN 0018-9197

Goh, Y.L., Ng, J.S., Tan, C.H. et al. (2 more authors) (2005) Excess noise measurement in In0.53Ga0.47As. IEEE Photonics Technology Letters, 17 (11). pp. 2412-2414. ISSN 1041-1135

Ng, J.S., Tan, C.H., David, J.P.R. et al. (1 more author) (2005) Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes. IEEE Journal of Quantum Electronics, 41 (8). pp. 1092-1096. ISSN 0018-9197

Groves, C., Tan, C.H., David, J.P.R. et al. (2 more authors) (2005) Exponential time response in analogue and Geiger mode avalanche photodiodes. IEEE Transactions on Electron Devices, 52 (7). pp. 1527-1534. ISSN 0018-9383

Groves, C., Chia, C.K., Tozer, R.C. et al. (2 more authors) (2005) Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3. IEEE Journal of Quantum Electronics, 41 (1). pp. 70-75. ISSN 0018-9197

Groves, C., Chia, C.K., Tozer, R.C. et al. (2 more authors) (2005) Avalanche noise characteristics of single AlxGa1-xAs(0.3 < x < 0.6)-GaAs heterojunction APDs. IEEE Journal of Quantum Electronics, 41 (1). pp. 70-75. ISSN 0018-9197

Yee, M., Ng, W.K., David, J.P.R. et al. (3 more authors) (2003) Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors. IEEE Transactions on Electron Devices, 50 (10). pp. 2021-2026. ISSN 0018-9383

Groves, C., Ghin, R., David, J.P.R. et al. (1 more author) (2003) Temperature dependence of impact ionization in GaAs. IEEE Transactions on Electron Devices, 50 (10). pp. 2027-2031. ISSN 0018-9383

Ng, B.K., David, J.P.R., Tozer, R.C. et al. (4 more authors) (2003) Nonlocal effects in thin 4H-SiC UV avalanche photodiodes. IEEE Transactions on Electron Devices, 50 (8). pp. 1724-1732. ISSN 0018-9383

Ng, J.S., Tan, C.H., David, J.P.R. et al. (2 more authors) (2003) Field dependence of impact ionization coefficients in In0.53Ga0.47As. IEEE Transactions on Electron Devices, 50 (4). pp. 901-905. ISSN 0018-9383

Hambleton, P.J., Ng, B.K., Plimmer, S.A. et al. (2 more authors) (2003) The effects of nonlocal impact ionization on the speed of avalanche photodiodes. IEEE Transactions on Electron Devices, 50 (2). pp. 347-351. ISSN 0018-9383

Ng, B.K., David, J.P.R., Rees, G.J. et al. (3 more authors) (2002) Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0-9). IEEE Transactions on Electron Devices, 49 (12). pp. 2349-2351. ISSN 0018-9383

Ng, B.K., Yan, F., David, J.P.R. et al. (4 more authors) (2002) Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes. IEEE Photonics Technology Letters, 14 (9). pp. 1342-1344. ISSN 1041-1135

Ng, J.S., Tan, C.H., Ng, B.K. et al. (5 more authors) (2002) Effect of dead space on avalanche speed. IEEE Transactions on Electron Devices, 49 (4). pp. 544-549. ISSN 0018-9383

Ng, B.K., David, J.P.R., Tozer, R.C. et al. (3 more authors) (2002) Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes. IEEE Photonics Technology Letters, 14 (4). pp. 522-524. ISSN 1041-1135

Ng, B.K., David, J.P.R., Plimmer, S.A. et al. (4 more authors) (2001) Avalanche multiplication characteristics of Al0.8Ga0.2As diodes. IEEE Transactions on Electron Devices, 48 (10). pp. 2198-2204. ISSN 0018-9383

Tan, C.H., David, J.P.R., Plimmer, S.A. et al. (3 more authors) (2001) Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes. IEEE Transactions on Electron Devices, 48 (7). pp. 1310-1317. ISSN 0018-9383

Plimmer, S.A., David, J.P.R., Grey, R. et al. (1 more author) (2000) Avalanche multiplication in AlxGa1-xAs (x=0to0.60). IEEE Transactions on Electron Devices, 47 (5). pp. 1089-1097. ISSN 0018-9383

Plimmer, S.A., David, J.P.R. and Ong, D.S. (2000) The merits and limitations of local impact ionization theory. IEEE Transactions on Electron Devices, 47 (5). pp. 1080-1088. ISSN 0018-9383

Li, K.F., Ong, D.S., David, J.P.R. et al. (5 more authors) (2000) Avalanche noise characteristics of thin GaAs structures with distributed carrier generation. IEEE Transactions on Electron Devices, 47 (5). pp. 910-914. ISSN 0018-9383

Proceedings Paper

Rockett, T.B.O., Richards, R.D., Gu, Y. et al. (4 more authors) (2017) Influence of Growth Conditions on the Structural and Opto-electronic Quality of GaAsBi. In: Journal of Crystal Growth. MBE 2016 - 19th International Conference on Molecular Beam Epitaxy, 04/09/2016 - 09/09/2016, Montpellier, France. Elsevier .

Ng, J.S. orcid.org/0000-0002-1064-0410, Zhou, X., Auckloo, A. et al. (5 more authors) (2016) High sensitivity InAs photodiodes for mid-infrared detection. In: Proceedings of SPIE. Electro-Optical Remote Sensing X, 26 - 27/09/2016, Edinburgh. Society of Photo-optical Instrumentation Engineers . ISBN 978-1-5106-0381-3

Richards, R.D. orcid.org/0000-0001-7043-8372, Harun, F., Cheong, J.S. et al. (6 more authors) (2016) GaAsBi: An Alternative to InGaAs Based Multiple Quantum Well Photovoltaics. In: Proceedings of the 43rd Photovoltaic Specialists Conference (PVSC) 2016. Photovoltaic Specialists Conference (PVSC), 05-10 Jun 2016, Portland, OR, USA. IEEE , pp. 1135-1137.

Ker, P.J., Marshall, A.R.J., Tan, C.H. orcid.org/0000-0002-8900-9452 et al. (1 more author) (2016) Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging. In: Photonics (ICP), 2016 IEEE 6th International Conference on. 2016 IEEE 6th International Conference on Photonics (ICP), 14-16 Mar 2016, Sarawak, Malaysia. IEEE .

Richards, R.D. orcid.org/0000-0001-7043-8372, Hunter, C.J., Bastiman, F. et al. (2 more authors) (2016) Telecommunication wavelength GaAsBi light emitting diodes. In: IET Optoelectronics. IET Optoelectronics. http://dx.doi.org/10.1049/iet-opt.2015.0051, 10 (2). Institution of Engineering and Technology , pp. 34-38.

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