InAs diodes fabricated using be ion implantation

White, B.S., Sandall, I.C., David, J.P.R. et al. (1 more author) (2015) InAs diodes fabricated using be ion implantation. IEEE Transactions on Electron Devices, 62 (9). 2928 - 2932. ISSN: 0018-9383

Abstract

Metadata

Item Type: Article
Authors/Creators:
  • White, B.S.
  • Sandall, I.C.
  • David, J.P.R.
  • Tan, C.H.
Copyright, Publisher and Additional Information:

© 2015 IEEE. This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/
Keywords: Annealing; indium arsenide; ion implantation; photodiode
Dates:
  • Accepted: 8 July 2015
  • Published (online): 5 August 2015
  • Published: September 2015
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Date Deposited: 27 Oct 2015 16:50
Last Modified: 14 May 2026 15:01
Status: Published
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Refereed: Yes
Identification Number: 10.1109/TED.2015.2456434
Related URLs:
Open Archives Initiative ID (OAI ID):

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