Strain-engineering in Germanium membranes towards light sources on Silicon

Burt, D, Al-Attili, AZ, Li, Z et al. (8 more authors) (2017) Strain-engineering in Germanium membranes towards light sources on Silicon. In: 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2017). 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2017), 28 Feb - 02 Mar 2017, Toyama, Japan. IEEE , pp. 92-94.

Abstract

Metadata

Item Type: Proceedings Paper
Authors/Creators:
  • Burt, D
  • Al-Attili, AZ
  • Li, Z
  • Liu, F
  • Oda, K
  • Higashitarumizu, N
  • Ishikawa, Y
  • Querin, OM
  • Gardès, F
  • Kelsall, RW
  • Saito, S
Copyright, Publisher and Additional Information:

(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Dates:
  • Published: 15 June 2017
  • Published (online): 15 June 2017
  • Accepted: 28 February 2017
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Mechanical Engineering (Leeds) > Institute of Engineering Systems and Design (iESD) (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 18 Aug 2017 08:32
Last Modified: 22 Jan 2018 14:01
Published Version: http://ieeexplore.ieee.org/document/7947522/
Status: Published
Publisher: IEEE
Identification Number: 10.1109/EDTM.2017.7947522
Open Archives Initiative ID (OAI ID):

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