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Number of items: 14.

Article

Zhao, X., Huang, K., Bruckbauer, J. et al. (9 more authors) (2020) Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon. Scientific Reports, 10 (1). 12650. ISSN 2045-2322

Bai, J., Cai, Y. orcid.org/0000-0002-2004-0881, Feng, P. et al. (4 more authors) (2020) Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width. ACS Nano. ISSN 1936-0851

Cai, Y., Shen, S., Zhu, C. et al. (3 more authors) (2020) Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon. ACS Applied Materials & Interfaces. ISSN 1944-8244

Bai, J., Cai, Y., Feng, P. et al. (4 more authors) (2020) A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs). ACS Photonics, 7 (2). pp. 411-415. ISSN 2330-4022

Zhu, C. orcid.org/0000-0002-5516-661X, Hobbs, M. orcid.org/0000-0003-4661-692X and Willmott, J.R. orcid.org/0000-0002-4242-1204 (2019) An accurate instrument for emissivity measurements by direct and indirect methods. Measurement Science and Technology. ISSN 0957-0233

Shen, S., Zhao, X., Yu, X. et al. (3 more authors) (2019) Semi‐polar InGaN‐based green light‐emitting diodes grown on silicon. physica status solidi (a). ISSN 1862-6300

Zhu, C. orcid.org/0000-0002-5516-661X, Hobbs, M.J., Masters, R.C. et al. (2 more authors) (2019) An accurate device for apparent emissivity characterisation in controlled atmospheric conditions up to 1423 K. IEEE Transactions on Instrumentation and Measurement. ISSN 0018-9456

Cai, Y. orcid.org/0000-0002-2004-0881, Yu, X., Shen, S. et al. (5 more authors) (2019) Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method. Semiconductor Science and Technology, 34 (4). 045012. ISSN 0268-1242

Zhu, C. orcid.org/0000-0002-5516-661X, Hobbs, M.J., Grainger, M.P. et al. (1 more author) (2018) Design and realization of a wide field of view infrared scanning system with an integrated micro-electromechanical system mirror. Applied Optics, 57 (36). pp. 10449-10457. ISSN 0003-6935

Cai, Y. orcid.org/0000-0002-2004-0881, Zhu, C., Jiu, L. et al. (5 more authors) (2018) Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1-xN Layers. Materials, 11 (10). 1968. ISSN 1996-1944

Cai, Y. orcid.org/0000-0002-2004-0881, Gong, Y., Bai, J. et al. (5 more authors) (2018) Controllable uniform green light emitters enabled by circular HEMT-LED devices. IEEE Photonics Journal, 10 (5).

Hobbs, M. orcid.org/0000-0003-4661-692X, Zhu, C., Grainger, M. et al. (2 more authors) (2018) Quantitative traceable temperature measurement using novel thermal imaging camera. Optics Express, 26 (19). 24904-24916. ISSN 1094-4087

Boone, N.A. orcid.org/0000-0002-5251-0104, Zhu, C., Smith, C. et al. (2 more authors) (2018) Thermal near infrared monitoring system for electron beam melting with emissivity tracking. Additive Manufacturing, 22. pp. 601-605. ISSN 2214-8604

Hobbs, M.J., Grainger, M.P., Zhu, C. et al. (2 more authors) (2018) Quantitative thermal imaging using single-pixel Si APD and MEMS mirror. Optics Express, 26 (3). pp. 3188-3198. ISSN 1094-4087

This list was generated on Sun Jan 31 17:39:39 2021 GMT.