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Number of items: 14.


Zhao, X., Huang, K., Bruckbauer, J. et al. (9 more authors) (2020) Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon. Scientific Reports, 10 (1). 12650. ISSN 2045-2322

Bai, J., Cai, Y., Feng, P. et al. (4 more authors) (2020) Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width. ACS Nano. ISSN 1936-0851

Cai, Y., Shen, S., Zhu, C. et al. (3 more authors) (2020) Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon. ACS Applied Materials & Interfaces. ISSN 1944-8244

Bai, J., Cai, Y., Feng, P. et al. (4 more authors) (2020) A direct epitaxial approach to achieving ultrasmall and ultrabright InGaN micro light-emitting diodes (μLEDs). ACS Photonics, 7 (2). pp. 411-415. ISSN 2330-4022

Zhu, C., Hobbs, M. and Willmott, J.R. (2019) An accurate instrument for emissivity measurements by direct and indirect methods. Measurement Science and Technology. ISSN 0957-0233

Shen, S., Zhao, X., Yu, X. et al. (3 more authors) (2019) Semi‐polar InGaN‐based green light‐emitting diodes grown on silicon. physica status solidi (a). ISSN 1862-6300

Zhu, C., Hobbs, M.J., Masters, R.C. et al. (2 more authors) (2019) An accurate device for apparent emissivity characterisation in controlled atmospheric conditions up to 1423 K. IEEE Transactions on Instrumentation and Measurement. ISSN 0018-9456

Cai, Y., Yu, X., Shen, S. et al. (5 more authors) (2019) Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method. Semiconductor Science and Technology, 34 (4). 045012. ISSN 0268-1242

Zhu, C., Hobbs, M.J., Grainger, M.P. et al. (1 more author) (2018) Design and realization of a wide field of view infrared scanning system with an integrated micro-electromechanical system mirror. Applied Optics, 57 (36). pp. 10449-10457. ISSN 0003-6935

Cai, Y., Zhu, C., Jiu, L. et al. (5 more authors) (2018) Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1-xN Layers. Materials, 11 (10). 1968. ISSN 1996-1944

Cai, Y., Gong, Y., Bai, J. et al. (5 more authors) (2018) Controllable uniform green light emitters enabled by circular HEMT-LED devices. IEEE Photonics Journal, 10 (5).

Hobbs, M., Zhu, C., Grainger, M. et al. (2 more authors) (2018) Quantitative traceable temperature measurement using novel thermal imaging camera. Optics Express, 26 (19). 24904-24916. ISSN 1094-4087

Boone, N.A., Zhu, C., Smith, C. et al. (2 more authors) (2018) Thermal near infrared monitoring system for electron beam melting with emissivity tracking. Additive Manufacturing, 22. pp. 601-605. ISSN 2214-8604

Hobbs, M.J., Grainger, M.P., Zhu, C. et al. (2 more authors) (2018) Quantitative thermal imaging using single-pixel Si APD and MEMS mirror. Optics Express, 26 (3). pp. 3188-3198. ISSN 1094-4087

This list was generated on Sun Jan 31 17:39:39 2021 GMT.