InAs n-i-p diodes fabricated using S and Si Ion implantation

Blain, T. orcid.org/0000-0002-7974-7355, Veitch, J., Shulyak, V. orcid.org/0000-0001-5223-0930 et al. (4 more authors) (2025) InAs n-i-p diodes fabricated using S and Si Ion implantation. IEEE Transactions on Electron Devices. ISSN 0018-9383

Abstract

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Item Type: Article
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© 2025 The Authors. Except as otherwise noted, this author-accepted version of a journal article published in IEEE Transactions on Electron Devices is made available via the University of Sheffield Research Publications and Copyright Policy under the terms of the Creative Commons Attribution 4.0 International License (CC-BY 4.0), which permits unrestricted use, distribution and reproduction in any medium, provided the original work is properly cited. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/

Keywords: Avalanche photodiode (APD); focal plane arrays (FPAs); indium arsenide (InAs); infrared detectors
Dates:
  • Accepted: 13 June 2025
  • Published (online): 26 June 2025
  • Published: 26 June 2025
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > School of Electrical and Electronic Engineering
Depositing User: Symplectic Sheffield
Date Deposited: 03 Jul 2025 13:16
Last Modified: 03 Jul 2025 13:18
Status: Published
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Refereed: Yes
Identification Number: 10.1109/ted.2025.3580394
Open Archives Initiative ID (OAI ID):

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