Blain, T. orcid.org/0000-0002-7974-7355, Veitch, J., Shulyak, V. orcid.org/0000-0001-5223-0930 et al. (4 more authors) (2025) InAs n-i-p diodes fabricated using S and Si Ion implantation. IEEE Transactions on Electron Devices. ISSN 0018-9383
Abstract
Planar indium arsenide (InAs) electron avalanche photodiodes (e-APDs) can provide significant avalanche gain with negligible excess noise. Reported InAs e-APDs are so far all top-side illuminated p-i-n diodes. Yet, back-side illuminated n-i-p diodes are needed to be compatible with focal plane arrays (FPAs) (bump-bonding process). This work reports n-type ion implantation into i-InAs layer grown on p-InAs layers, forming n-i-p diodes for the first time. Electrical and optical characteristics of S-and Si-implanted mesa and planar photodiodes are investigated both experimentally and through simulation. The mesa InAs n-i-p diodes fabricated from implanted samples exhibit similar dark current densities to previously reported Be implanted mesa InAs p-i-n diodes. A peak responsivity of 1.09 A/W at 2004 nm wavelength was demonstrated using S implanted detectors after rapid thermal annealing at 600 ∘C for 30 s. The simple planar diodes exhibit higher dark current compared to Be implanted planar InAs p-i-n diodes. This is attributed to poor junction isolation resulting from n-type unintentional doping in intrinsic InAs layers. This can be mitigated by adding isolation trenches around the diodes or introducing p-type isolation implant. Therefore, we have demonstrated a promising approach for fabricating bump-bonding compatible and back-illuminated InAs n-i-p planar diodes.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2025 The Authors. Except as otherwise noted, this author-accepted version of a journal article published in IEEE Transactions on Electron Devices is made available via the University of Sheffield Research Publications and Copyright Policy under the terms of the Creative Commons Attribution 4.0 International License (CC-BY 4.0), which permits unrestricted use, distribution and reproduction in any medium, provided the original work is properly cited. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ |
Keywords: | Avalanche photodiode (APD); focal plane arrays (FPAs); indium arsenide (InAs); infrared detectors |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > School of Electrical and Electronic Engineering |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 03 Jul 2025 13:16 |
Last Modified: | 03 Jul 2025 13:18 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Refereed: | Yes |
Identification Number: | 10.1109/ted.2025.3580394 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:228725 |
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Licence: CC-BY 4.0