Hirohata, Atsufumi orcid.org/0000-0001-9107-2330 (2022) MRAM makes its mark. Nature Electronics. ISSN: 2520-1131
Abstract
A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lower the power consumption of data storage and management.
Metadata
| Item Type: | Article | 
|---|---|
| Authors/Creators: | 
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| Copyright, Publisher and Additional Information: | This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details  | 
        
| Dates: | 
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| Institution: | The University of York | 
| Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) | 
| Depositing User: | Pure (York) | 
| Date Deposited: | 05 Dec 2022 16:50 | 
| Last Modified: | 20 Sep 2025 01:55 | 
| Published Version: | https://doi.org/10.1038/s41928-022-00893-w | 
| Status: | Published | 
| Refereed: | No | 
| Identification Number: | 10.1038/s41928-022-00893-w | 
| Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:194123 | 
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