Investigation on shift in threshold voltages of 1.2 kV GaN polarization superjunction (PSJ) HFETs

Du, Y., Yan, H., Luo, P. et al. (5 more authors) (2023) Investigation on shift in threshold voltages of 1.2 kV GaN polarization superjunction (PSJ) HFETs. IEEE Transactions on Electron Devices, 70 (1). pp. 178-184. ISSN 0018-9383

Abstract

Metadata

Item Type: Article
Authors/Creators:
Copyright, Publisher and Additional Information:

© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.

Keywords: GaN ohmic gate; gate stress; holes injection; polarization superjunction (PSJ); power devices; threshold voltages shift
Dates:
  • Published: January 2023
  • Published (online): 7 December 2022
  • Accepted: 27 November 2022
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 07 Dec 2022 14:48
Last Modified: 07 Dec 2023 01:13
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: 10.1109/TED.2022.3225695
Open Archives Initiative ID (OAI ID):

Export

Statistics