zeng, H., Yu, X., Fonseka, H.A. et al. (5 more authors) (2020) Preferred growth direction of III-V nanowires on differently oriented Si substrates. Nanotechnology, 31 (47). 475708. ISSN 0957-4484
Abstract
One of the nanowire characteristics is its preferred elongation direction. Here, we investigated the impact of Si substrate crystal orientation on the growth direction of GaAs nanowires. We first studied the self-catalyzed GaAs nanowire growth on Si (111) and Si (001) substrates. SEM observations show GaAs nanowires on Si (001) are grown along four <111> directions without preference on one or some of them. This non-preferential nanowire growth on Si (001) is morphologically in contrast to the extensively reported vertical <111> preferred GaAs nanowire growth on Si (111) substrates. We propose a model based on the initial condition of an ideal Ga droplet formation on Si substrates and the surface free energy calculation which takes into account the dangling bond surface density for different facets. This model provides further understanding of the different preferences in the growth of GaAs nanowires along selected <111> directions depending on the Si substrate orientation. To verify the prevalence of the model, nanowires were grown on Si (311) substrates. The results are in good agreement with the three-dimensional mapping of surface free energy by our model. This general model can also be applied to predictions of nanowire preferred growth directions by the vapor-liquid-solid growth mode on other group IV and III-V substrates.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2020 The Author(s). As the Version of Record of this article is going to be / has been published on a gold open access basis under a CC BY 3.0 licence, this Accepted Manuscript is available for reuse under a CC BY 3.0 licence immediately. Everyone is permitted to use all or part of the original content in this article, provided that they adhere to all the terms of the licence: https://creativecommons.org/licences/by/3.0. |
Keywords: | III-V Nanowires; MBE; Surface free energy; Growth direction |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number Engineering and Physical Science Research Council EP/M015181/1; EP/P006361/1; EP/P006973/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 21 Aug 2020 13:39 |
Last Modified: | 25 Jan 2022 12:10 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/1361-6528/abafd7 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:164672 |
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