An ultralow power 3-terminal memory device with write capability in the off-state

In this work, we demonstrated a room temperature fabricated ZnO/Ta 2 O 5 transistor for low power compute-in-memory application. By writing during the off-state, the device programmed for compute-in-memory shows power consumption in nW. By using variable pulse amplitudes for SET/RESET allows control of the on/off ratio of resistance states without affecting power consumption. Benchmarked against other ReRAMs the device shows a competitive 8 nJ per transition, which allows a reduction of power consumption in comparison to a filamentary device.