Unni, V., Long, H.Y., Yan, H. et al. (3 more authors) (2018) Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs. IET Power Electronics, 11 (14). pp. 2198-2203. ISSN 1755-4535
Abstract
The magnitude of saturation current in a power device significantly impacts its short-circuit capability. In conjunction with the unprecedented miniaturisation that gallium nitride (GaN) offers, there is a compelling rationale to examine this critical parameter in GaN transistors for thermally stable and reliable power converter applications. This study presents a comprehensive analysis of the physical behaviour that yields intrinsically low drain current saturation in GaN polarisation super junction heterojunction field-effect transistors (PSJ HFETs). The analysis in this work has been performed using electrical characterisation data of conventional and PSJ HFETs, supported by physics-based two-dimensional device simulations. Insight is gained on the differing device architecture-dependent mechanisms that determine the magnitude of drain current density in both types of devices when biased in the saturation region.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2018 The Institution of Engineering and Technology. This is an author-produced version of a paper subsequently published in IET Power Electronics. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | gallium compounds; III-V semiconductors; current density; semiconductor device models; wide band gap semiconductors; power HEMT; drain current density; drain current saturation behaviour; saturation current; power device; short-circuit capability; gallium nitride; GaN polarisation super junction heterojunction field-effect transistors; power converter applications; PSJ HFET; physics-based 2D device simulations; GaN |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 12 Apr 2019 10:52 |
Last Modified: | 12 Apr 2019 12:14 |
Status: | Published |
Publisher: | Institution of Engineering and Technology |
Refereed: | Yes |
Identification Number: | 10.1049/iet-pel.2018.5583 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:144832 |