An E-mode p-channel GaN MOSHFET for a CMOS compatible PMIC

Kumar, A. orcid.org/0000-0002-8288-6401 and De Souza, M.M. (2017) An E-mode p-channel GaN MOSHFET for a CMOS compatible PMIC. IEEE Electron Device Letters, 38 (10). pp. 1449-1452. ISSN 0741-3106

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Item Type: Article
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Keywords: 2DHG; Enhancement mode; Gallium Nitride; p-channel MOSHFET; superjunction; inverter; switching speed
Dates:
  • Published: October 2017
  • Published (online): 31 August 2017
  • Accepted: 29 August 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
Funder
Grant number
ENIAC
296131-1
Depositing User: Symplectic Sheffield
Date Deposited: 21 Sep 2017 11:49
Last Modified: 28 Jun 2018 15:37
Published Version: https://doi.org/10.1109/LED.2017.2747898
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: 10.1109/LED.2017.2747898
Open Archives Initiative ID (OAI ID):

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