Hirohata, Atsufumi orcid.org/0000-0001-9107-2330 (2022) MRAM makes its mark. Nature Electronics. ISSN 2520-1131
Abstract
A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lower the power consumption of data storage and management.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Pure (York) |
Date Deposited: | 05 Dec 2022 16:50 |
Last Modified: | 21 Jan 2025 18:06 |
Published Version: | https://doi.org/10.1038/s41928-022-00893-w |
Status: | Published |
Refereed: | No |
Identification Number: | 10.1038/s41928-022-00893-w |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:194123 |
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