An E-mode p-channel GaN MOSHFET for a CMOS compatible PMIC

Kumar, A. orcid.org/0000-0002-8288-6401 and De Souza, M.M. (2017) An E-mode p-channel GaN MOSHFET for a CMOS compatible PMIC. IEEE Electron Device Letters, 38 (10). pp. 1449-1452. ISSN 0741-3106

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Copyright, Publisher and Additional Information: © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords: 2DHG; Enhancement mode; Gallium Nitride; p-channel MOSHFET; superjunction; inverter; switching speed
Dates:
  • Accepted: 29 August 2017
  • Published (online): 31 August 2017
  • Published: October 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENIAC296131-1
Depositing User: Symplectic Sheffield
Date Deposited: 21 Sep 2017 11:49
Last Modified: 28 Jun 2018 15:37
Published Version: https://doi.org/10.1109/LED.2017.2747898
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: https://doi.org/10.1109/LED.2017.2747898

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