Items where authors include "Richards, R.D."

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Number of items: 20.

Article

Rockett, T.B.O., Adham, N.A., Harun, F. et al. (2 more authors) (2022) Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods. Journal of Crystal Growth, 589. 126679. ISSN 0022-0248

Bailey, N.J., Carr, M.R., David, J.P.R. et al. (1 more author) (2022) Growth of InAs(Bi)/GaAs quantum dots under a bismuth surfactant at high and low temperature. Journal of Nanomaterials, 2022. 5108923. ISSN 1687-4110

Richards, R.D. orcid.org/0000-0001-7043-8372, Bailey, N.J., Liu, Y. et al. (2 more authors) (2022) GaAsBi: from molecular beam epitaxy growth to devices. physica status solidi (b), 259 (2). 2100330. ISSN 0370-1972

Bailey, N.J. orcid.org/0000-0001-8131-8544, Rockett, T.B.O., Flores, S. et al. (3 more authors) (2022) Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling. Scientific Reports, 12. 797. ISSN 2045-2322

Okujima, M., Yoshikawa, K., Mori, S. et al. (6 more authors) (2021) Molecular beam epitaxial growth of GaAs/GaNAsBi core–multishell nanowires. Applied Physics Express, 14 (11). 115002. ISSN 1882-0778

Rockett, T.B.O., Boone, N.A., Richards, R.D. orcid.org/0000-0001-7043-8372 et al. (1 more author) (2021) Thermal imaging metrology using high dynamic range near-infrared photovoltaic-mode camera. Sensors, 21 (18). 6151. ISSN 1424-8220

Liu, Y., Yi, X., Bailey, N.J. et al. (6 more authors) (2021) Valence band engineering of GaAsBi for low noise avalanche photodiodes. Nature Communications, 12 (1). 4784.

Richards, R.D. orcid.org/0000-0001-7043-8372, Harun, F., Nawawi, M.R.M. et al. (3 more authors) (2021) Temperature and band gap dependence of GaAsBi p-i-n diode current–voltage behaviour. Journal of Physics D: Applied Physics, 54 (19). 195102. ISSN 0022-3727

Flores, S., Reyes, D.F., Braza, V. et al. (6 more authors) (2019) Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies. Applied Surface Science, 485. pp. 29-34. ISSN 0169-4332

Richards, R.D. orcid.org/0000-0001-7043-8372, Rockett, T.B.O., Nawawi, M.R.M. et al. (6 more authors) (2018) Light-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature. Semiconductor Science and Technology, 33 (9). 094008. ISSN 0268-1242

Balades, N., Sales, D.L., Herrera, M. et al. (4 more authors) (2018) Analysis of Bi Distribution in Epitaxial GaAsBi by aberration-corrected HAADF-STEM. Nanoscale Research Letters, 13. 125. ISSN 1931-7573

Wilson, T., Hylton, N.P., Harada, Y. orcid.org/0000-0003-4784-6751 et al. (6 more authors) (2018) Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi. Scientific Reports, 8 (1). 6457. ISSN 2045-2322

Richards, R.D. orcid.org/0000-0001-7043-8372, Mellor, A., Harun, F. et al. (7 more authors) (2017) Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices. Solar Energy Materials and Solar Cells, 172. pp. 238-243. ISSN 0927-0248

Gelczuk, Ł., Kopaczek, J., Rockett, T.B.O. et al. (2 more authors) (2017) Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties. Scientific Reports, 7. 12824. ISSN 2045-2322

Balanta, M.A.G., Kopaczek, J., Orsi Gordo, V. et al. (8 more authors) (2016) Optical and spin properties of localized and free excitons in GaBi ₓAs₁-ₓ /GaAs multiple quantum wells. Journal of Physics D: Applied Physics, 49 (35). ISSN 0022-3727

Richards, R.D. orcid.org/0000-0001-7043-8372, Bastiman, F., Roberts, J.S. et al. (3 more authors) (2015) MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization. Journal of Crystal Growth, 425. pp. 237-240. ISSN 0022-0248

Walther, T., Richards, R.D. and Bastiman, F. (2015) Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy. Crystal Research and Technology, 50 (1). pp. 38-42. ISSN 1521-4079

Proceedings Paper

Rockett, T.B.O., Richards, R.D., Gu, Y. et al. (4 more authors) (2017) Influence of Growth Conditions on the Structural and Opto-electronic Quality of GaAsBi. In: Journal of Crystal Growth. MBE 2016 - 19th International Conference on Molecular Beam Epitaxy, 04/09/2016 - 09/09/2016, Montpellier, France. Elsevier .

Richards, R.D. orcid.org/0000-0001-7043-8372, Harun, F., Cheong, J.S. et al. (6 more authors) (2016) GaAsBi: An Alternative to InGaAs Based Multiple Quantum Well Photovoltaics. In: Proceedings of the 43rd Photovoltaic Specialists Conference (PVSC) 2016. Photovoltaic Specialists Conference (PVSC), 05-10 Jun 2016, Portland, OR, USA. IEEE , pp. 1135-1137.

Richards, R.D. orcid.org/0000-0001-7043-8372, Hunter, C.J., Bastiman, F. et al. (2 more authors) (2016) Telecommunication wavelength GaAsBi light emitting diodes. In: IET Optoelectronics. IET Optoelectronics. http://dx.doi.org/10.1049/iet-opt.2015.0051, 10 (2). Institution of Engineering and Technology , pp. 34-38.

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