Items where authors include "Bastiman, F."

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Number of items: 8.

Article

Flores, S., Reyes, D.F., Braza, V. et al. (6 more authors) (2019) Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies. Applied Surface Science, 485. pp. 29-34. ISSN 0169-4332

Santana, T.S., Ma, Y., Malein, R.N.E. et al. (3 more authors) (2017) Generating indistinguishable photons from a quantum dot in a noisy environment. Physical Review B , 95. 201410(R). ISSN 2469-9950

Balanta, M.A.G., Kopaczek, J., Orsi Gordo, V. et al. (8 more authors) (2016) Optical and spin properties of localized and free excitons in GaBi ₓAs₁-ₓ /GaAs multiple quantum wells. Journal of Physics D: Applied Physics, 49 (35). ISSN 0022-3727

Richards, R.D. orcid.org/0000-0001-7043-8372, Bastiman, F., Roberts, J.S. et al. (3 more authors) (2015) MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization. Journal of Crystal Growth, 425. pp. 237-240. ISSN 0022-0248

Tinkler, L., Walker, P.M., Clarke, E. orcid.org/0000-0002-8287-0282 et al. (4 more authors) (2015) Design and characterization of high optical quality InGaAs/GaAs/AlGaAs-based polariton microcavities. Applied Physics Letters, 106 (2). 021109. ISSN 0003-6951

Walther, T., Richards, R.D. and Bastiman, F. (2015) Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy. Crystal Research and Technology, 50 (1). pp. 38-42. ISSN 1521-4079

Cilibrizzi, P., Askitopoulos, A., Silva, M. et al. (5 more authors) (2014) Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells. Applied Physics Letters, 105. 191118. ISSN 0003-6951

Proceedings Paper

Richards, R.D. orcid.org/0000-0001-7043-8372, Hunter, C.J., Bastiman, F. et al. (2 more authors) (2016) Telecommunication wavelength GaAsBi light emitting diodes. In: IET Optoelectronics. IET Optoelectronics. http://dx.doi.org/10.1049/iet-opt.2015.0051, 10 (2). Institution of Engineering and Technology , pp. 34-38.

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