Zajac, J.M., Clarke, E. and Langbein, W. (2012) Suppression of cross-hatched polariton disorder in GaAs/AlAs microcavities by strain compensation. Applied Physics Letters, 101. 041114. ISSN 0003-6951
Abstract
Zinc-blende semiconductor heterostructures grown in the [001] direction with a small lattice mismatch accommodate stress by developing a cross-hatch dislocation pattern. In GaAs based planar microcavitiesgrown by molecular beam epitaxy, this pattern creates a potential landscape for exciton-polaritons, causing scattering and localization. We report here on suppressing the cross-hatch by introducing strain-compensating AlP layers into the center of the low index AlAs layers of the distributed Bragg reflectors. We observe a reduction of the cross-hatch dislocation density by at least one order of magnitude for 1.1 nm thick AlP layers, which correspond to an effective AlAs0.985P0.015 low index layer. These compensated structures show a remaining polariton disorder potential in the 10 μeV range.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2012 American Institute of Physics. Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 26 Apr 2016 09:00 |
Last Modified: | 26 Apr 2016 09:08 |
Published Version: | http://dx.doi.org/10.1063/1.4739245 |
Status: | Published |
Publisher: | American Institute of Physics |
Refereed: | Yes |
Identification Number: | 10.1063/1.4739245 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:97407 |