Walther, T. and Krysa, A.B. (2014) Twinning in GaAs nanowires on patterned GaAs(111)B. Crystal Research and Technology, 50 (1). pp. 62-68. ISSN 0232-1300
Abstract
We have studied twinning in GaAs nanowires grown via holes in a silica mask deposited on GaAs(111)B substrates by metal-organic chemical vapour epitaxy without catalysts. Twins perpendicular to the growth direction form in the nanowires, their {111}-type side facets leading to corrugation of their {110} side walls. The top facets are almost atomically smooth. Aberration corrected annular dark-field scanning transmission electron microscopy reveals all twins are rotational, commencing with layers of Ga and finishing with As atoms. Energy-loss spectroscopic profiling has shown no significant changes in the band-gap or bulk plasmon energy at those twin boundaries, and the observed reduction of the interface plasmon energy by ∼0.13 eV is close to the detection limit of the technique, reflecting the very low energetic electronic changes related to twin formation.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Editors: |
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Copyright, Publisher and Additional Information: | © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
Keywords: | GaAs; nanowires;transmission electron microscopy; annular dark field; electron energy-loss spectroscopy |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 07 Dec 2015 14:48 |
Last Modified: | 07 Dec 2015 14:48 |
Published Version: | http://dx.doi.org/10.1002/crat.201400166 |
Status: | Published |
Publisher: | Wiley-VCH Verlag |
Refereed: | Yes |
Identification Number: | 10.1002/crat.201400166 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:91478 |