Measurement and characterisation technique for real-time die temperature prediction of MOSFET-based power electronics

This paper presents a technique to predict the die temperature of a MOSFET based on an empirical model derived following an offline thermal characterization. First, a method for the near-simultaneous measurement of die temperature during controlled power dissipation is presented. The method uses a linear arbitrary waveform power controller which is momentarily disconnected at regular intervals to allow the forward voltage drop of the MOSFET's antiparallel diode to be measured. Careful timing ensures the power dissipation is not significantly affected by the repeated disconnection of the power controller. Second, a pseudorandom binary sequence-based system identification approach is used to determine the thermal transfer impedance, or cross coupling between the dice of two devices on shared cooling using the near-simultaneous measurement and control method. A set of infinite impulse response digital filters are fitted to the cross-coupling characteristics and used to form a temperature predictor. Experimental verification shows excellent agreement between measured and predicted temperature responses to power dissipation. Results confirm the usefulness of the technique for predicting die temperatures in real time without the need for on-die sensors.