Tan, S.L., Soong, W.M., Green, J.E. et al. (9 more authors) (2013) Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes. Applied Physics Letters, 103. 102101. ISSN 0003-6951
Abstract
The anomalous behavior of impact ionization in dilute-nitride GaInNAs photodiodes with a range of nitrogen content below 4% is investigated. The ratio of hole- and electron-initiated ionization coefficients, k = β/α, is enhanced by a factor up to ∼4 with increasing nitrogen content. The absolute ionization coefficients are suppressed by up to two orders of magnitude at low electric fields in samples with 3% N. The narrow band gap, suppressed impact ionization, and increased breakdown voltage characteristics of GaInNAs make it a suitable material for use as part of a composite collector in GaAs-based heterojunction bipolar transistors.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 03 Nov 2014 10:57 |
Last Modified: | 03 Nov 2014 10:57 |
Published Version: | http://dx.doi.org/10.1063/1.4819846 |
Status: | Published |
Publisher: | American Institute of Physics |
Identification Number: | 10.1063/1.4819846 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:81378 |