Intersubband carrier scattering in n - and p-Si SiGe quantum wells with diffuse interfaces

Scattering rate calculations in two-dimensional Si Si1-x Gex systems have typically been restricted to rectangular Ge profiles at interfaces between layers. Real interfaces, however, may exhibit diffuse Ge profiles either by design or as a limitation of the growth process. It is shown here that alloy disorder scattering dramatically increases with Ge interdiffusion in (100) and (111) n -type quantum wells, but remains almost constant in (100) p -type heterostructures. It is also shown that smoothing of the confining potential leads to large changes in subband energies and scattering rates, and a method is presented for calculating growth process tolerances.