Zhou, J. orcid.org/0000-0003-3578-2121, Do, H.-B. orcid.org/0000-0003-3274-5050 and De Souza, M.M. orcid.org/0000-0002-7804-7154 (2023) Impact of an underlying 2DEG on the performance of a p-channel MOSFET in GaN. ACS Applied Electronic Materials, 5 (6). pp. 3309-3315. ISSN 2637-6113
Abstract
The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. By reducing the concentration of the 2DEG, a greater potential can be dropped across the GaN channel, resulting in enhanced electrostatic control. Therefore, to minimize the deleterious impact on the on-state performance, a composite graded back-to-back AlGaN barrier that enables a trade-off between n-channel devices and Enhancement-mode (E-mode) p-channel is investigated. In simulations, a scaled p-channel GaN device with LG = 200 nm, LSD = 600 nm achieves an ION of 65 mA/mm, an increase of 44.4% compared to a device with an AlGaN barrier with fixed Al mole fraction, ION/IOFF of ∼1012, and |Vth| of | – 1.3 V|. For the n-channel device, the back-to-back barrier overcomes the reduction of ION induced by the p-GaN gate resulting in an ION of 860 mA/mm, an increase of 19.7% compared with the counterpart with the conventional barrier with 0.5 V positive Vth shift.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2023 The Authors. Published by American Chemical Society. This is an Open Access article distributed under the terms of the Creative Commons Attribution Licence (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
Keywords: | 2DHG; E-mode; GaN; MOSFET; p-channel; n-channel; AlGaN; graded channel |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 11 Jul 2023 15:52 |
Last Modified: | 11 Jul 2023 15:52 |
Status: | Published |
Publisher: | American Chemical Society (ACS) |
Refereed: | Yes |
Identification Number: | 10.1021/acsaelm.3c00350 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:201381 |
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