Collins, X., Sheridan, B.S., Price, D.M. et al. (5 more authors) (2023) Low-noise AlGaAsSb avalanche photodiodes for 1550 nm light detection. In: Jiang, S. and Digonnet, M.J., (eds.) Optical Components and Materials XX. SPIE OPTO, 28 Jan - 03 Feb 2023, San Francisco, California, United States. Society of Photo Optical Instrumentation Engineers (SPIE) , 124170k-124170k. ISBN 9781510659391
Abstract
Avalanche photodiodes (APD) can improve the signal to noise ratio in applications such as LIDAR, range finding and optical time domain reflectometry. However, APDs operating at eye-safe wavelengths around 1550 nm currently limit the sensitivity because the APDs’ impact ionization coefficients in the avalanche layers are too similar, leading to poor excess noise performance. The material AlGaAsSb has highly dissimilar impact ionization coefficients (with electrons dominating the avalanche gain) so is an excellent avalanche material for 1550 nm wavelength APDs. We previously reported a 1550 nm wavelength AlGaAsSb SAM APD with extremely low excess noise factors, 1.93 at a gain of 10 and 2.94 at a gain of 20. Using a more optimized design, we have now realized an AlGaAsSb SAM APD with a lower dark current (7 nA at a gain of 10 from a 230 μm diameter APD), a higher responsivity (0.97 A/W) and a lower excess noise (1.9 at a gain of 40), compared to our previous SAM APD. Noise-equivalent-power (NEP) measurements of our APD with a simple transimpedance amplifier circuit produced an NEP 12 times lower than a state-of-the-art APD under identical test conditions, confirming the advantage of low-noise AlGaAsSb SAM APDs.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Editors: |
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Copyright, Publisher and Additional Information: | © 2023 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, or modification of the contents of the publication are prohibited. |
Keywords: | AlGaAsSb; avalanche photodiode; low noise,; photodetector; NIR; LIDAR; excess noise; impact ionization |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number INNOVATE UK 10031973 TS/X002098/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 21 Jun 2023 10:03 |
Last Modified: | 21 Jun 2023 10:44 |
Status: | Published |
Publisher: | Society of Photo Optical Instrumentation Engineers (SPIE) |
Refereed: | Yes |
Identification Number: | 10.1117/12.2651669 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:200667 |