Growth of InAs(Bi)/GaAs quantum dots under a bismuth surfactant at high and low temperature

Bailey, N.J., Carr, M.R., David, J.P.R. et al. (1 more author) (2022) Growth of InAs(Bi)/GaAs quantum dots under a bismuth surfactant at high and low temperature. Journal of Nanomaterials, 2022. 5108923. ISSN 1687-4110

Abstract

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Item Type: Article
Authors/Creators:
Copyright, Publisher and Additional Information:

© 2022 N. J. Bailey et al. This is an open access article distributed under the Creative Commons Attribution License, (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Dates:
  • Published: 6 June 2022
  • Published (online): 6 June 2022
  • Accepted: 18 May 2022
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
Funder
Grant number
ROYAL ACADEMY OF ENGINEERING (THE)
RF/1516/15/43
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL
EP/S036792/1
Engineering and Physical Sciences Research Council
EP/M506618/1
ROYAL ACADEMY OF ENGINEERING (THE)
RF1516\15\43
Depositing User: Symplectic Sheffield
Date Deposited: 10 Jun 2022 13:09
Last Modified: 10 Jun 2022 13:09
Status: Published
Publisher: Hindawi
Refereed: Yes
Identification Number: 10.1155/2022/5108923
Open Archives Initiative ID (OAI ID):

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