Yin, Y. and Lee, K.B. orcid.org/0000-0002-5374-2767 (2022) High-performance enhancement-mode p-channel GaN MISFETs with steep subthreshold swing. IEEE Electron Device Letters, 43 (4). pp. 533-536. ISSN 0741-3106
Abstract
We report an enhancement-mode (E-mode) p -channel GaN heterojunction field-effect transistor with a metal-insulator-semiconductor gate structure. A 60 mV/dec subthreshold swing is experimentally achieved in the E-mode GaN p -channel transistors on an unintentionally doped GaN interlayer for the first time by using a low-power plasma gate recessing etch and gate dielectric deposition pre-treatment. The fabricated p -channel transistors exhibit excellent E-mode performance with a threshold voltage of −1.53 V, an effective on-resistance of 1.0 kΩ .mm, a peak transconductance of 1.0 mS/mm, and a high ION/IOFF ratio > 10^7 . Bi-directional gate sweep measurements on the p-channel devices show a threshold voltage shift of 0.12 V and an increased subthreshold swing of 107 mV/dec. In addition, the dual-channel conduction mechanism in the p -channel GaN transistors is presented and discussed.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2022 IEEE. |
Keywords: | Enhancement mode; Gate recess; p-channel; Subthreshold Swing; Threshold voltage hysteresis |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number Engineering and Physical Sciences Research Council EP/N015878/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 08 Apr 2022 07:25 |
Last Modified: | 08 Apr 2022 07:25 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Refereed: | Yes |
Identification Number: | 10.1109/led.2022.3152308 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:185557 |