Richards, R.D. orcid.org/0000-0001-7043-8372, Bailey, N.J., Liu, Y. et al. (2 more authors) (2022) GaAsBi: from molecular beam epitaxy growth to devices. physica status solidi (b), 259 (2). 2100330. ISSN 0370-1972
Abstract
GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi-induced localized states induce a rapid rising of the valence band edge through a band anticrossing interaction, which has a profound effect on the bandgap and the spin–orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress toward many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. This review, presents an overview of the applications for which GaAsBi has been advocated and the key results in these areas. The molecular beam epitaxy growth and postgrowth processing of GaAsBi are then explored as well as the novel techniques that have been suggested to improve material quality.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 Wiley-VCH GmbH. This is an author-produced version of a paper subsequently published in physica status solidi (b). Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | dilute bismide; molecular beam epitaxy; optoelectronic devices; III–V semiconductors |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 13 Jan 2022 12:55 |
Last Modified: | 21 Nov 2022 01:14 |
Status: | Published |
Publisher: | Wiley |
Refereed: | Yes |
Identification Number: | 10.1002/pssb.202100330 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:182499 |