GaAsBi: from molecular beam epitaxy growth to devices

Richards, R.D. orcid.org/0000-0001-7043-8372, Bailey, N.J., Liu, Y. et al. (2 more authors) (2022) GaAsBi: from molecular beam epitaxy growth to devices. physica status solidi (b), 259 (2). 2100330. ISSN 0370-1972

Abstract

Metadata

Item Type: Article
Authors/Creators:
Copyright, Publisher and Additional Information:

© 2021 Wiley-VCH GmbH. This is an author-produced version of a paper subsequently published in physica status solidi (b). Uploaded in accordance with the publisher's self-archiving policy.

Keywords: dilute bismide; molecular beam epitaxy; optoelectronic devices; III–V semiconductors
Dates:
  • Published: 21 February 2022
  • Published (online): 21 November 2021
  • Accepted: 9 November 2021
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 13 Jan 2022 12:55
Last Modified: 21 Nov 2022 01:14
Status: Published
Publisher: Wiley
Refereed: Yes
Identification Number: 10.1002/pssb.202100330
Related URLs:
Open Archives Initiative ID (OAI ID):

Export

Statistics