Investigation of electrical properties of InGaN based micro light emitting diode (µLED) arrays achieved by direct epitaxy

Esendag, V. orcid.org/0000-0002-4483-8759, Bai, J., Fletcher, P. et al. (4 more authors) (2021) Investigation of electrical properties of InGaN based micro light emitting diode (µLED) arrays achieved by direct epitaxy. physica status solidi (a) – applications and materials science, 218 (24). 2100474. ISSN 1862-6300

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Item Type: Article
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© 2021 John Wiley & Sons Inc. This is an author-produced version of a paper subsequently published in physica status solidi (a). Uploaded in accordance with the publisher's self-archiving policy.

Keywords: current leakage; GaN; micro-LEDs; overgrowth; response time
Dates:
  • Published: 21 December 2021
  • Published (online): 23 October 2021
  • Accepted: 6 October 2021
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
Funder
Grant number
Engineering and Physical Sciences Research Council
EP/M015181/1; EP/P006973/1; EP/T013001/1
Depositing User: Symplectic Sheffield
Date Deposited: 14 Oct 2021 07:21
Last Modified: 23 Oct 2022 00:13
Status: Published
Publisher: Wiley
Refereed: Yes
Identification Number: 10.1002/pssa.202100474
Open Archives Initiative ID (OAI ID):

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