Monolithic InP quantum dot mode-locked lasers emitting at 730 nm

Abstract

This letter reports on InP/GaInP quantum dot mode-locked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is utilised to support passive mode-locking in a monolithically integrated two-section ridge laser. The conditions for mode-locking were explored by varying the current to the gain section and reverse bias to the absorber section. For a total cavity length of 3 mm, the shortest pulse train observed was 6 ps in duration with a repetition rate of 12.55 GHz.

Metadata

Item Type:	Article
Authors/Creators:	Li, Z. Allford, C.P. Shutts, S. Forrest, A.F. Alharbi, R. Krysa, A.B. https://orcid.org/0000-0001-8320-7354 Cataluna, M.A. Smowton, P.M.
Copyright, Publisher and Additional Information:	© 2020 IEEE.
Keywords:	mode-locked laser diode; monolithic integration; InP quantum dots
Dates:	Published (online): 28 July 2020 Published: 1 September 2020
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:	Funder Grant number Engineering and Physical Science Research Council EP/P006973/1
Depositing User:	Symplectic Sheffield
Date Deposited:	21 Oct 2020 07:46
Last Modified:	21 Oct 2020 07:46
Status:	Published
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
Refereed:	Yes
Identification Number:	10.1109/lpt.2020.3012568
Related URLs:	Author
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:166996

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Monolithic InP quantum dot mode-locked lasers emitting at 730 nm

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