Luo, P. and Madathil, S.N.E. orcid.org/0000-0001-6832-1300 (2020) Theoretical analysis of on-state performance limit of 4H-SiC IGBT in field-stop technology. IEEE Transactions on Electron Devices, 67 (12). pp. 5621-5627. ISSN 0018-9383
Abstract
In this paper, the on-state performance limits of 4H-SiC IGBTs are theoretically estimated for the first time and compared against silicon counterparts. The theoretical analysis is based on the static modelling of a high-current PiN diode and the calculation results are examined with TCAD simulations. Owing to conductivity modulation effect, the on-state losses of 4H-SiC IGBTs do not show any significant increase with the increase in breakdown voltage. However, the large built-in potential of SiC poses an inherent limit on the reduction of on-state voltage drop. Compared with 4H-SiC IGBTs, the silicon based IGBTs exhibit superior on-state performance limits within the breakdown voltage range considered, although their drift layer thicknesses are 10 times higher than that of 4H-SiC IGBTs. Therefore, silicon IGBTs remain as efficient technologies for enhancing high power conversion efficiency.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 26 Oct 2020 15:27 |
Last Modified: | 04 Feb 2022 11:17 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers |
Refereed: | Yes |
Identification Number: | 10.1109/TED.2020.3033268 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:166945 |