Cai, Y. orcid.org/0000-0002-2004-0881, Gong, Y., Bai, J. et al. (5 more authors) (2018) Controllable uniform green light emitters enabled by circular HEMT-LED devices. IEEE Photonics Journal, 10 (5).
Abstract
This paper reports a monolithic integration of GaN high-electron-mobility transistor (HEMT) and green light-emitting diode (LED), where the circular HEMT is surrounded by a ring-shaped LED and two devices are seamlessly interconnected by the LED's n-GaN layer and the HEMT's two-dimensional electron gas (2DEG) channel. By adopting such a novel circular layout design, the green HEMT-LED shows a controllable and uniform green light emission at 507 nm by simply tuning its gate voltage. This enables a uniform, controllable green LED light source, serving as an essential element in the red-green-blue (RGB) LED solution for a wide range of applications, such as tunable-spectrum white LED illumination, multichannel visible light communication with wavelength division multiplexing, RGB-based full-color LED displays, and optogenetics.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2018 IEEE. |
Keywords: | Green; HEMT-LED; light emitters |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number Engineering and Physical Science Research Council EP/P006973/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 06 Apr 2020 13:40 |
Last Modified: | 06 Apr 2020 13:40 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Refereed: | Yes |
Identification Number: | 10.1109/jphot.2018.2867821 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:159180 |