Semi‐polar InGaN‐based green light‐emitting diodes grown on silicon

Shen, S., Zhao, X., Yu, X. et al. (3 more authors) (2020) Semi‐polar InGaN‐based green light‐emitting diodes grown on silicon. physica status solidi (a), 217 (7). 1900654. ISSN 1862-6300

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Item Type: Article
Authors/Creators:
Copyright, Publisher and Additional Information:

© 2019 WILEY‐VCH Verlag GmbH & Co.

Keywords: GaN; light-emitting diodes; semi-polar; silicon
Dates:
  • Published: April 2020
  • Published (online): 11 November 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
Funder
Grant number
Engineering and Physical Science Research Council
EP/M003132/1; EP/M015181/1; EP/P006973/1
Depositing User: Symplectic Sheffield
Date Deposited: 06 Apr 2020 13:06
Last Modified: 26 Nov 2021 14:07
Status: Published
Publisher: Wiley
Refereed: Yes
Identification Number: 10.1002/pssa.201900654
Open Archives Initiative ID (OAI ID):

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