Murray, M, Jose, G orcid.org/0000-0001-9856-6755, Richards, B orcid.org/0000-0002-1552-9244 et al. (1 more author) (2013) Femtosecond pulsed laser deposition of silicon thin films. Nanoscale Research Letters, 8 (1). e272. ISSN 1931-7573
Abstract
Optimisation of femtosecond pulsed laser deposition parameters for the fabrication of silicon thin films is discussed. Substrate temperature, gas pressure and gas type are used to better understand the deposition process and optimise it for the fabrication of high-quality thin films designed for optical and optoelectronic applications.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2013 Murray et al.; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
Keywords: | Femtosecond pulsed laser deposition; Silicon thin films; Chemical vapour deposition |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Chemical & Process Engineering (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 02 Apr 2019 08:05 |
Last Modified: | 25 Jun 2023 21:15 |
Status: | Published |
Publisher: | SpringerOpen |
Identification Number: | 10.1186/1556-276X-8-272 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:127906 |