Petersen, A., Stone, D.A. orcid.org/0000-0002-5770-3917 and Foster, M.P. (2017) On the impact of current generation commercial gallium nitride power transistors on power converter loss. Electronics Letters, 53 (22). pp. 1487-1489. ISSN 0013-5194
Abstract
The enormous potential benefits of gallium nitride based power switching devices, only commercially available very recently, in terms of power switching device loss are highlighted. This is first demonstrated through a simulated prediction of loss in multilevel converters, followed by experimental validation. While the simulations focus on losses in multilevel converters, the observations made are relevant in a broad range of applications.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | This paper is a postprint of a paper submitted to and accepted for publication in Electronics Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at the IET Digital Library http://digital-library.theiet.org/content/journals/10.1049/el.2017.3183. |
Keywords: | current generation commercial power transistors; power converter loss; power switching device loss; multilevel converters; GaN |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 08 Jan 2018 11:25 |
Last Modified: | 08 Jan 2018 11:27 |
Published Version: | https://doi.org/10.1049/el.2017.3183 |
Status: | Published |
Publisher: | Institution of Engineering and Technology (IET) |
Refereed: | Yes |
Identification Number: | 10.1049/el.2017.3183 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:122032 |