Extending the bounds of performance in E-mode p-channel GaN MOSHFETs

Abstract

An investigation of the distribution of the electric field within a normally-off p-channel heterostructure field-effect transistor in GaN, explains why a high |Vth| requires a reduction of the thickness of oxide and the GaN channel layer. The trade-off between on-current |Ion| and |Vth|, responsible for the poor |ION| in E-mode devices is overcome with an additional cap AlGaN layer that modulates the electric field in itself and the oxide. A record |Ion| of 50-60 mA/mm is achieved with a |Vth| greater than |-2| V in the designed E-mode p-channel MOSHFET, which is more than double that in a conventional device.

Metadata

Item Type:	Proceedings Paper
Authors/Creators:	Kumar, A. https://orcid.org/0000-0002-8288-6401 De Souza, M.M.
Copyright, Publisher and Additional Information:	© 2017, IEEE. This is an author produced version of a paper subsequently published in Electron Devices Meeting (IEDM), 2016 IEEE International. Uploaded in accordance with the publisher's self-archiving policy.
Dates:	Published (online): 2 February 2017 Published: 3 December 2016
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:	Funder Grant number ENIAC 296131-1
Depositing User:	Symplectic Sheffield
Date Deposited:	31 Jul 2017 14:11
Last Modified:	19 Dec 2022 13:36
Published Version:	https://doi.org/10.1109/IEDM.2016.7838368
Status:	Published
Publisher:	IEEE
Refereed:	Yes
Identification Number:	10.1109/IEDM.2016.7838368
Related URLs:	Author
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:119664

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Extending the bounds of performance in E-mode p-channel GaN MOSHFETs

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