Velichko, A.V., Kudrynskyi, Z.R., Di Paola, D.M. et al. (7 more authors) (2016) Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters, 109 (18). 182115. ISSN 0003-6951
Abstract
We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) EP/J015814/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 01 Dec 2016 13:08 |
Last Modified: | 01 Dec 2016 13:10 |
Published Version: | https://doi.org/10.1063/1.4967381 |
Status: | Published |
Publisher: | AIP Publishing |
Refereed: | Yes |
Identification Number: | 10.1063/1.4967381 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:108815 |