Double-layer-gate architecture for few-hole GaAs quantum dots

Metadata

Item Type:	Article
Authors/Creators:	Wang, D.Q. Hamilton, A.R. Farrer, I. https://orcid.org/0000-0002-3033-4306 Ritchie, D.A. Klochan, O.
Copyright, Publisher and Additional Information:	© 2016 IOP Publishing. This is an author produced version of a paper subsequently published in Nanotechnology. Uploaded in accordance with the publisher's self-archiving policy.
Dates:	Accepted: 20 June 2016 Published: 8 July 2016
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	01 Aug 2016 12:15
Last Modified:	19 Jul 2017 01:35
Published Version:	http://dx.doi.org/10.1088/0957-4484/27/33/334001
Status:	Published
Publisher:	IOP Publishing
Refereed:	Yes
Identification Number:	10.1088/0957-4484/27/33/334001
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:103204

CORE (COnnecting REpositories)