Lee, K.B., Guiney, I., Jiang, S. et al. (7 more authors) (2015) Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000V. Applied Physics Express, 8 (3). 036502. ISSN 1882-0778
Abstract
Enhancement-mode AlInN/GaN metal–insulator–semiconductor heterostructure field-effect transistors on silicon are reported. A fluorine-based plasma treatment and gate dielectric are employed, and the devices exhibit a threshold voltage of +3 V. A drain current density of 295 mA/mm for a gate bias of +10 V is measured. An excellent off-state blocking voltage capability of 630 V for a leakage current of 1 µA/mm, and over 1000 V for 10 µA/mm are achieved on a 20-µm-gate–drain separation device at gate bias of 0 V. The dynamic on-resistance is ~2.2 times the DC on-resistance when pulsing from an off-state drain bias of 500 V.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2015 The Japan Society of Applied Physics. This is an author produced version of a paper subsequently published in Applied Physics Express. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 21 Sep 2016 09:15 |
Last Modified: | 20 Mar 2018 21:47 |
Published Version: | http://dx.doi.org/10.7567/APEX.8.036502 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.7567/APEX.8.036502 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:98678 |