Development of phase shift lithography for the production of metal-oxide-metal diodes
Dodd, LE, Rosamond, MC, Gallant, AJ et al. (1 more author)
(2014)
Development of phase shift lithography for the production of metal-oxide-metal diodes.
Micro and Nano Letters, 9 (7).
pp. 437-440.
Abstract
Metal-oxide-metal (MOM) diodes have been produced by combining two novel techniques: a reactive ion etche and subsequent plasma oxidation, and a phase shift lithography process. This has resulted in a significant reduction in device feature sizes, down to sub-micron dimensions and with an improved zero voltage curvature coefficient of up to 2.8 V-1 for the associated diodes. Given the use of MOM diodes in high speed rectification applications, the combination of the reduction in diode area as well as the controlled oxide growth aims to assist in the improved cutoff frequency of the devices, thus ensuring the potential for high speed applications.
Metadata
Item Type:
Article
Authors/Creators:
Dodd, LE
Rosamond, MC
Gallant, AJ
Wood, D
Copyright, Publisher and Additional Information:
(c) 2014, The Institution of Engineering and Technology. This paper is a postprint of a paper submitted to and accepted for publication in Micro & Nano Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library. Uploaded in accordance with the publisher's self-archiving policy.
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