A theoretical comparison of the breakdown behavior of In0.52Al0.48As and InP near-infrared single-photon avalanche photodiodes

We study the breakdown characteristics and timing statistics of InP and In0.52Al0.48As single-photon avalanche photodiodes (SPADs) with avalanche widths ranging from 0.2 to 1.0 mu m at room temperature using a random ionization path-length model. Our results show that, for a given avalanche width, the breakdown probability of In0.52Al0.48As SPADs increases faster with overbias than InP SPADs. When we compared their timing statistics, we observed that, for a given breakdown probability, InP requires a shorter time to reach breakdown and exhibits a smaller timing jitter than In0.52Al0.48As. However, due to the lower dark count probability and faster rise in breakdown probability with overbias, In0.52Al0.48As SPADs with avalanche widths <= 0.5 mu m are more suitable for single-photon detection at telecommunication wavelengths than InP SPADs. Moreover, we predict that, in InP SPADs with avalanche widths <= 0.3 mu m and In0.52Al0.48As SPADs with avalanche widths <= 0.2 mu m, the dark count probability is higher than the photon count probability for all applied biases.