Buca, D, Wirths, S, Stange, D et al. (7 more authors) (2014) Si-Ge-Sn heterostructures: Growth and applications. In: Proceedings of 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, 02-04 Jun 2014, Singapore. IEEE Computer Society , 163 - 164. ISBN 9781479954285
Abstract
This new class of group IV semiconductors, i.e. GeSn and SiGeSn, will enable novel integrated photonic and electronic devices due to the direct gap, the feasibility to tune the gap energies and the band alignments. Remarkable progress has been achieved in the growth of high quality heterostructures, high-k gate stacks and metal contact formation required for future nanodevices.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 23 Mar 2015 14:41 |
Last Modified: | 19 Dec 2022 13:30 |
Published Version: | http://dx.doi.org/10.1109/ISTDM.2014.6874691 |
Status: | Published |
Publisher: | IEEE Computer Society |
Identification Number: | 10.1109/ISTDM.2014.6874691 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:83481 |