Warburton, RE, Intermite, G, Myronov, M et al. (11 more authors) (2013) Ge-on-Si Single-Photon Avalanche Diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm. IEEE Transactions on Electron Devices, 60 (11). 3807 - 3813. ISSN 0018-9383
Abstract
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | (c) 2013, Warburton, RE, Intermite, G, Myronov, M, Allred, P, Leadley, DR, Gallacher, K, Paul, DJ, Pilgrim, NJ, Lever, LJM, Ikonic, Z, Kelsall, RW, Huante-Ceron, E, Knights, AP and Buller, GS. This is an Open Access article distributed in accordance with the Creative Commons Attribution (CC BY 4.0) licence, which permits others to distribute, remix, adapt, build upon this work, and license their derivative works on different terms, provided the original work is properly cited. |
Keywords: | Detector; Germanium on silicon; Single-photon avalanche diode; Single-photon counting |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 14 Apr 2014 10:59 |
Last Modified: | 14 Apr 2014 16:38 |
Published Version: | http://dx.doi.org/10.1109/TED.2013.2282712 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers |
Identification Number: | 10.1109/TED.2013.2282712 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:78406 |