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Valavanis, A, Ikonić, Z and Kelsall, RW (2008) Intersubband carrier scattering in n - and p-Si SiGe quantum wells with diffuse interfaces. Physical Review B - Condensed Matter and Materials Physics, 77 (7). ? - ? . ISSN 1098-0121
Abstract
Scattering rate calculations in two-dimensional Si Si1-x Gex systems have typically been restricted to rectangular Ge profiles at interfaces between layers. Real interfaces, however, may exhibit diffuse Ge profiles either by design or as a limitation of the growth process. It is shown here that alloy disorder scattering dramatically increases with Ge interdiffusion in (100) and (111) n -type quantum wells, but remains almost constant in (100) p -type heterostructures. It is also shown that smoothing of the confining potential leads to large changes in subband energies and scattering rates, and a method is presented for calculating growth process tolerances.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | (c) 2008, American Physical Society . This is an author produced version of a paper published in Physical Review B -Condensed Matter and Materials Physics. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Dr Alexander Valavanis |
Date Deposited: | 15 Jan 2015 14:23 |
Last Modified: | 23 Jun 2023 21:32 |
Published Version: | http://dx.doi.org/10.1103/PhysRevB.77.075312 |
Status: | Published |
Publisher: | American Physical Society |
Refereed: | Yes |
Identification Number: | 10.1103/PhysRevB.77.075312 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:75242 |
Available Versions of this Item
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Intersubband carrier scattering in n- and p-Si/SiGe quantum wells with diffuse interfaces. (deposited 15 Feb 2008 16:18)
- Intersubband carrier scattering in n - and p-Si SiGe quantum wells with diffuse interfaces. (deposited 15 Jan 2015 14:23) [Currently Displayed]