Evaluation of a 1200 V polarization super junction GaN field-effect transistor in cascode configuration

Sheikhan, A. orcid.org/0000-0002-2207-1593, Narayanan, E.M.S. orcid.org/0000-0001-6832-1300, Kawai, H. et al. (2 more authors) (2025) Evaluation of a 1200 V polarization super junction GaN field-effect transistor in cascode configuration. Electronics, 14 (3). 624. ISSN 1450-5843

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Item Type: Article
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© 2025 The Authors. This is an Open Access article distributed under the terms of the Creative Commons Attribution Licence (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Keywords: cascode; polarization super junction; 1200 V; GaN-FET
Dates:
  • Published: 5 February 2025
  • Published (online): 5 February 2025
  • Accepted: 2 February 2025
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
The University of Sheffield > Faculty of Engineering (Sheffield) > School of Electrical and Electronic Engineering
Depositing User: Symplectic Sheffield
Date Deposited: 14 Mar 2025 12:23
Last Modified: 14 Mar 2025 12:23
Published Version: https://doi.org/10.3390/electronics14030624
Status: Published
Publisher: MDPI AG
Refereed: Yes
Identification Number: 10.3390/electronics14030624
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