Sheikhan, A. orcid.org/0000-0002-2207-1593, Narayanan, E.M.S. orcid.org/0000-0001-6832-1300, Kawai, H. et al. (2 more authors) (2025) Evaluation of a 1200 V polarization super junction GaN field-effect transistor in cascode configuration. Electronics, 14 (3). 624. ISSN 1450-5843
Abstract
GaN HEMTs based on polarization super junction (PSJ) technology offer significant improvements in efficiency and power density over conventional silicon (Si) devices due to their excellent material characteristics, which enable fast switching edges and lower specific on-resistance. However, due to the presence of an uninterrupted channel between drain and source at zero gate bias, these devices have normally-on characteristics. In this paper, the performance of a 1200 V GaN FET utilizing PSJ technology in cascode configuration is reported. The device working principle, characteristics, and switching behavior are experimentally demonstrated. The results show that cascoded GaN FETs utilizing the PSJ concept are highly promising for power device applications.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2025 The Authors. This is an Open Access article distributed under the terms of the Creative Commons Attribution Licence (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
Keywords: | cascode; polarization super junction; 1200 V; GaN-FET |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) The University of Sheffield > Faculty of Engineering (Sheffield) > School of Electrical and Electronic Engineering |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 14 Mar 2025 12:23 |
Last Modified: | 14 Mar 2025 12:23 |
Published Version: | https://doi.org/10.3390/electronics14030624 |
Status: | Published |
Publisher: | MDPI AG |
Refereed: | Yes |
Identification Number: | 10.3390/electronics14030624 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:224409 |