Sheikhan, A. orcid.org/0000-0002-2207-1593, Narayanan, E.M.S. orcid.org/0000-0001-6832-1300, Kawai, H. et al. (2 more authors) (2024) Evaluation of a 3 kV polarization superjunction GaN HEMT. In: PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management Proceedings. PCIM Europe 2024; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 11-13 Jun 2024, Nürnberg, Germany. VDE VERLAG GMBH , pp. 549-556. ISBN 9783800762620
Abstract
Gallium Nitride (GaN) offers unique material properties making it more suitable for high frequency, high voltage, power dense applications. Our GaN devices benefit from high density polarization charges of 2DEG and 2DHG, which coexist in respective heterojunctions of a double heterostructure to form a charge balanced, polarization based super junction (PSJ). This capability enables design of area efficient, scalable, high performance transistors and diodes. This paper demonstrates a large area, 3 kV PSJ GaN high electron mobility transistor (HEMT) fabricated on sapphire. The device characteristics, working principle and switching performance are experimentally investigated. The device shows a low on-state resistance of 210 mΩ at 25̊C. At elevated operating temperatures, it can be observed that the turn-off switching losses are not affected while the turn-on losses show a small increase. Also, a wide range of dV/dt controllability can be achieved through intelligent control of gate without significant increase in losses to meet various application requirements.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2024 VDE VERLAG GMBH. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > School of Electrical and Electronic Engineering The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 15 Jan 2025 16:49 |
Last Modified: | 12 Mar 2025 11:55 |
Published Version: | https://ieeexplore.ieee.org/document/10653917 |
Status: | Published |
Publisher: | VDE VERLAG GMBH |
Refereed: | Yes |
Identification Number: | 10.30420/566262068 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:221420 |
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Filename: 3kV_GaN_PSJ_HEMT.pdf
