Zhang, Bosen, Chen, Jieyao, Wang, Junlin et al. (6 more authors) (2024) Effect of Defects on the Characteristics of CoFeB–MgO-Based MRAM Structure. Spin. 2350029. ISSN 2010-3255
Abstract
Magnetic random-access memory (MRAM) is one of the most promising next-generation purpose memory devices for nonvolatile storage and in-memory computing. However, material defects can affect the performance of the MRAM device. Here, the relationship between the material defects and the properties of CoFeB–MgO-based MRAM have been studied with micromagnetic simulations. The results show that the coercivity and the switching speed are strongly influenced by the material defects. This work provides a useful guideline for the fabrication of the MARM devices.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | This is an author-produced version of the published paper. Uploaded in accordance with the University’s Research Publications and Open Access policy. |
Keywords: | MRAM,magnetisation switching |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | Pure (York) |
Date Deposited: | 11 Dec 2024 14:00 |
Last Modified: | 22 Feb 2025 00:08 |
Published Version: | https://doi.org/10.1142/S2010324723500297 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1142/S2010324723500297 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:220716 |
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