Liu, M., Junk, Y., Han, Y. et al. (11 more authors) (2023) Vertical GeSn nanowire MOSFETs for CMOS beyond silicon. Communications Engineering, 2 (7). ISSN 2731-3395
Abstract
The continued downscaling of silicon CMOS technology presents challenges for achieving the required low power consumption. While high mobility channel materials hold promise for improved device performance at low power levels, a material system which enables both high mobility n-FETs and p-FETs, that is compatible with Si technology and can be readily integrated into existing fabrication lines is required. Here, we present high performance, vertical nanowire gate-all-around FETs based on the GeSn-material system grown on Si. While the p-FET transconductance is increased to 850 µS/µm by exploiting the small band gap of GeSn as source yielding high injection velocities, the mobility in n-FETs is increased 2.5-fold compared to a Ge reference device, by using GeSn as channel material. The potential of the material system for a future beyond Si CMOS logic and quantum computing applications is demonstrated via a GeSn inverter and steep switching at cryogenic temperatures, respectively.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © The Author(s) 2023. This is an open access article under the terms of the Creative Commons Attribution License (CC-BY 4.0), which permits unrestricted use, distribution and reproduction in any medium, provided the original work is properly cited. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 08 Nov 2024 12:40 |
Last Modified: | 08 Nov 2024 12:40 |
Status: | Published |
Publisher: | Nature Research |
Identification Number: | 10.1038/s44172-023-00059-2 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:219359 |