Taylor-Mew, J. orcid.org/0000-0002-0895-2968, Collins, X. orcid.org/0000-0003-1323-7907, White, B. orcid.org/0000-0001-8785-7151 et al. (2 more authors) (2024) Development of InGaAs/AlGaAsSb Geiger mode avalanche photodiodes. IEEE Transactions on Electron Devices, 71 (3). pp. 1994-1998. ISSN 0018-9383
Abstract
Near-infrared linear mode Al 0.85 Ga 0.15 As 0.56 Sb 0.44 avalanche photodiodes (APDs) exhibit excellent temperature stability, potentially simplifying Geiger mode operation. We have carried out the first experimental evaluation of In 0.53 Ga 0.47 As/Al 0.85 Ga 0.15 As 0.56 Sb 0.44 APDs in Geiger mode. Characterization on multiple devices included temperature-dependent dark current, avalanche multiplication, dark count rate (DCR), afterpulsing, and single photon detection efficiency (SPDE). The temperature coefficient of breakdown voltage extracted from avalanche multiplication data was 13.5 mV⋅K−1 , much lower than InGaAs/InP Geiger mode APDs, reducing changes in operation voltage and offering possible protection from high optical power thermal attack in communication systems. At 200 K, SPDE were 5%–16% with DCR of 1–20 Mc⋅s−1 , comparable to InAlAs and early InP-based Single Photon APDs. The afterpulsing at 200 K was negligible for hold-off time > 50 μ s (reducing to 5 μ s at 250 K). These are similar to the performance of InGaAs/InAlAs and some InGaAs/InP Geiger mode APDs. The data reported in this article is available from the ORDA digital repository (https://doi.org/10.15131/shef.data.24125721).
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2024 The Authors. Except as otherwise noted, this author-accepted version of a journal article published in IEEE Transactions on Electron Devices is made available via the University of Sheffield Research Publications and Copyright Policy under the terms of the Creative Commons Attribution 4.0 International License (CC-BY 4.0), which permits unrestricted use, distribution and reproduction in any medium, provided the original work is properly cited. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ |
Keywords: | — AlGaAsSb; geiger mode avalanche photodiode (APD); single photon APD; single photon avalanche diode (SPAD); single photon detection efficiency (SPDE) |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number Innovate UK 10031973 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 05 Feb 2024 15:12 |
Last Modified: | 07 Nov 2024 11:26 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Refereed: | Yes |
Identification Number: | 10.1109/ted.2024.3354698 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:208743 |