Do, H.-B., Phan-Gia, A.-V., Nguyen, V.Q. et al. (1 more author) (2022) Optimization of normally-off β-Ga2O3 MOSFET with high Ion and BFOM: A TCAD study. AIP Advances, 12 (6). 065024. ISSN 2158-3226
Abstract
A combination of recessed-gate and gate-field plate in lateral β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed in the Technology Computer Aided Design study to improve its ON resistance (RON) and breakdown voltage. Enhancement-mode (E-mode) is achieved by controlling the thickness of the recessed-gate. Lateral E-mode β-Ga2O3 MOSFET achieves a saturation current density near 120 mA/mm, ION/IOFF ratio ∼109, RON ∼91 Ω mm, and breakdown voltage of 1543 V. The optimized structure results in a prediction of a power figure-of-merit of 261 MW/cm2 in a horizontal E-mode β-Ga2O3 MOSFET.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/) |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 23 Sep 2022 09:00 |
Last Modified: | 23 Sep 2022 09:01 |
Status: | Published |
Publisher: | AIP Publishing LLC |
Refereed: | Yes |
Identification Number: | 10.1063/5.0094418 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:191265 |