Bailey, N.J., Carr, M.R., David, J.P.R. et al. (1 more author) (2022) Growth of InAs(Bi)/GaAs quantum dots under a bismuth surfactant at high and low temperature. Journal of Nanomaterials, 2022. 5108923. ISSN 1687-4110
Abstract
Indium arsenide quantum dots are of great interest for next-generation telecom optoelectronics if their emission wavelength can be red shifted into the correct range. One method to achieve this is the deposition of a surfactant, such as bismuth, during quantum dot growth. Here, we present a series of indium arsenide quantum dot layers grown using several bismuth fluxes and two different growth temperatures. The effects of bismuth flux on quantum dot morphology and optical properties are studied by atomic force microscopy and photoluminescence measurements. Bimodal distributions of quantum dots are seen at low growth temperature, while at high temperature, a single dominant distribution is seen in most of the layers. A medium bismuth flux was seen to produce the highest integrated photoluminescence intensity at high growth temperature, whereas intensity saturates between medium and high fluxes at low growth temperatures. A significant increase in uncorrected aspect ratio seen for the layer grown with a low bismuth flux at high growth temperature presents a new opportunity for control of quantum dot morphology using bismuth.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2022 N. J. Bailey et al. This is an open access article distributed under the Creative Commons Attribution License, (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
Dates: |
|
Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ROYAL ACADEMY OF ENGINEERING (THE) RF/1516/15/43 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/S036792/1 Engineering and Physical Sciences Research Council EP/M506618/1 ROYAL ACADEMY OF ENGINEERING (THE) RF1516\15\43 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 10 Jun 2022 13:09 |
Last Modified: | 10 Jun 2022 13:09 |
Status: | Published |
Publisher: | Hindawi |
Refereed: | Yes |
Identification Number: | 10.1155/2022/5108923 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:187872 |