Rockett, T.B.O., Adham, N.A., Harun, F. et al. (2 more authors) (2022) Growth of GaAsBi/GaAs multiple quantum wells with up to 120 periods. Journal of Crystal Growth, 589. 126679. ISSN 0022-0248
Abstract
In this work, we demonstrate the MBE growth of a systematic series of GaAsBi/GaAs multiple quantum well devices with up to 120 periods and report on their structural and optical characterisation. TEM images confirm the incorporation of a record number of wells for this material, while showing reasonable thickness uniformity. Fitting of the XRD data becomes worse as the number of quantum wells increases due to strain relaxation and out-of-plane growth inhomogeneity. The devices are compared to a previous series of devices grown in our group using PL and are found to have less severe strain relaxation due to the thicker barriers and lower average strain in the MQW stack, despite containing a greater number of wells.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2022 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/). |
Keywords: | A1.X-ray diffraction; A3.Molecular beam epitaxy; B1.Bismuth compounds; B2.Semiconducting III-V materials; B3.Solar cells; |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number Engineering and Physical Sciences Research Council EP/S036792/1 The Royal Academy of Engineering RF/1516/15/43 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 05 May 2022 09:59 |
Last Modified: | 05 May 2022 09:59 |
Status: | Published |
Publisher: | Elsevier |
Refereed: | Yes |
Identification Number: | 10.1016/j.jcrysgro.2022.126679 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:186359 |