Zheng, X, Wang, J, Li, G et al. (7 more authors) (2020) Paradigm of Magnetic Domain Wall-Based In-Memory Computing. ACS Applied Electronic Materials, 2 (8). pp. 2375-2382. ISSN 2637-6113
Abstract
While conventional microelectronic integrated circuits based on electron charges approach the theoretical limitations in foreseeable future, next-generation nonvolatile logic units based on electron spins have the potential to build logic networks of low power consumption. Central to this spin-based architecture is the development of a paradigm for in-memory computing with magnetic logic units. Here, we demonstrate the basic function of a transistor logic unit with patterned Y-shaped NiFe nanowires by gate-controlled domain-wall pinning and depinning. This spin-based architecture possesses the critical functionalities of transistors and can achieve a programmable logic gate by using only one Y-shaped nanostructure, which represents a universal design currently lacking for in-memory computing.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2020 American Chemical Society. This is an author produced version of an article published in ACS Applied Electronic Materials. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | in-memory computing, spin-based transistor, programmable nano-logic unit, domain-wall logic, permalloy |
Dates: |
|
Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 26 Apr 2021 09:37 |
Last Modified: | 07 Jul 2021 00:38 |
Status: | Published |
Publisher: | American Chemical Society (ACS) |
Identification Number: | 10.1021/acsaelm.0c00318 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:173157 |